Electronic structure of Ga1-x CrxN investigated by photoemission spectroscopy

Electronic structure of Ga1-x CrxN investigated by photoemission spectroscopy

We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the dierence spectrum between the valence band photoemission spectra of non-doped GaN and that of theGa0:937Cr0:063N, we observed the new energy state, in band gap,...

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Veröffentlicht in:Current applied physics 2004, 4(6), , pp.603-606
Hauptverfasser: J.J.Kim, H.Makino, K.Yamazaki, A.Ino, H.Namatame, M.Taniguchi, T.Hanada, M.W.Cho, T.Yao
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Sprache:kor
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물리학
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Zusammenfassung:We have obtained the Cr 3d-like energy states, which located in the band gap of GaN by means of resonant photoemission spectroscopy. In the dierence spectrum between the valence band photoemission spectra of non-doped GaN and that of theGa0:937Cr0:063N, we observed the new energy state, in band gap, consists of Cr 3d-like and N 2p-like component by strong hybridization. KCI Citation Count: 5
ISSN:1567-1739
1878-1675