Electron emission characteristics of the porous polycrystalline silicon diode

It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol=1:1 und...

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Veröffentlicht in:Current applied physics 2002, 2(3), , pp.233-235
Hauptverfasser: Kim, Hoon, Park, Jong-Won, Lee, Joo-Won, Lee, Yun-Hi, Song, Yoon-Ho, Lee, Jin-Ho, Cho, Kyung-Ik, Jang, Jin, Oh, Myung-Hwan, Ju, Byeong-Kwon
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Sprache:eng
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Zusammenfassung:It is estimated that a porous polysilicon (PPS) diode with a structure of Au/PPS/n-type Si operates as an efficient stable surface emitting cold cathode. 2.0 μm of an non-doped polysilicon layer is formed on an heavily doped n-type silicon wafer and anodized in a solution of HF (50%):ethanol=1:1 under illumination by a 500 W tungsten lamp from a distance of 20 cm. The electron emission properties of the PPS diode were investigated as a function of anodizing condition such as anodizing current density. The electron emission trajectory was investigated, and it was also demonstrated their good uniformity in the emitting area.
ISSN:1567-1739
1878-1675
DOI:10.1016/S1567-1739(02)00093-7