Design of Various Dipolar Source for Improvement of Electrostatic Discharge Protection Performance of 0.18 μm_30 V DDDNMOS Transistor for High Voltage Application

The double diffused drain N-type MOS (DDDNMOS) transistor with a dipolar source is proposed to realize stable and robust electrostatic discharge (ESD) protection performance. The proposed dipolar source is a structure in which a P+ diffusion layer is intentionally inserted on the side of the N+ source to prevent lateral diffusion of the electron-rich region from the N+ source. According to the 2D simulation and measured TLP results, it was found that the inserted P+ diffusion layer effectively prevented the formation of deep electron channels caused by electron injection. Therefore, the double snapback phenomenon, which is a problem in the conventional DDDNMOS standard device, can be solved. KCI Citation Count: 0