Properties of CuInxGa1−xSe2 thin films grown from electrodeposited precursors with different levels of selenium content

In this paper, polycrystalline CuInxGa1xSe2 (CIGS) thin film absorbers were prepared by selenizing electrodeposited (ED) precursors with two different levels of selenium content: rich in selenium and poor in selenium. Comparing the results obtained by X-ray fluorescence (XRF), X-ray diffraction (XRD), scanning electron microscopy (SEM) and illuminated current–voltage (J–V), it was found that absorber layers processed from Se-poor ED precursors shows better crystalline quality and increased gallium incorporation,which thus improved cell performance, compared to the layers grown using Se-rich ED precursors. The best cell fabricated from Se-poor ED precursor shows a conversion efficiency of 1.63% at AM1.5 global light. KCI Citation Count: 21