Analysis of electrical performance of MgZnO/ZnO high electron mobility transistor

The electrical performance of MgZnO/ZnO high electron mobility transistor (HEMT) is analyzed in this work. A physics-based analysis is performed to compute the two-dimensional electron gas (2-DEG density: n s ) for different gate-voltage ( V g ), difference in the Fermi potential ( E F ) and position of first sub-band ( E 0 ), linearity range measurement parameter: d ( E F − E 0 )/ dV g , gate-source capacitance ( C gs ) for different thickness of barrier layer ( d = 30, 35, and 40 nm); Mg composition ( x = 0.37, 0.47, and 0.57); and temperature ( T = 300, 400, and 500 K). It is noticed that in the weak-inversion region: − 4 V