Milliwatt-class non-polar a-plane InGaN/GaN light-emitting diodes grown directly on r-plane sapphire substrates
Non-polar a-plane ( 11 2 ¯ 0 ) light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane ( 1 1 ¯ 20 ) sapphire substrates. The full width at half maximums (FWHMs) of the X-ray r...
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Veröffentlicht in: | Current applied physics 2010, 10(6), , pp.1407-1410 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Non-polar a-plane
(
11
2
¯
0
)
light-emitting diodes (LEDs) in InGaN/GaN multiple quantum well structures were successfully fabricated by metal organic chemical vapor deposition (MOCVD) directly grown on r-plane
(
1
1
¯
20
)
sapphire substrates. The full width at half maximums (FWHMs) of the X-ray rocking curve (XRC) of an a-plane GaN template along the c- and m-axes were measured to be ∼349 and ∼533
arcsec, respectively. The optical output power and external quantum efficiency (EQE) at drive currents of 20
mA and 100
mA under direct current operation in on-wafer measurements were 1.24
mW, 2.4% and 100
mA, 1.7%, respectively. The a-plane LED showed 2.8
nm blue shift with change in drive current from 5
mA to 100
mA. The polarization ratio at room temperature was 0.4 and it indicates that the a-plane LED has polarization anisotropy. |
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ISSN: | 1567-1739 1878-1675 |
DOI: | 10.1016/j.cap.2010.05.003 |