Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier

We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measu...

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Veröffentlicht in:Journal of semiconductor technology and science 2024, 24(1), 115, pp.25-32
Hauptverfasser: Maeda, Shogo, Shinohara, Keito, Empizo, Melvin John F., Sarukura, Nobuhiko, Kuzuhara, Masaaki, Yamamoto, Akio, Asubar, Joel T., Kawabata, Shinsaku, Nagase, Itsuki, Baratov, Ali, Ishiguro, Masaki, Nezu, Toi, Igarashi, Takahiro, Sekiyama, Kishi, Terai, Suguru
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Sprache:eng
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Zusammenfassung:We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al2O3/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device. KCI Citation Count: 0
ISSN:1598-1657
2233-4866
2233-4866
1598-1657
DOI:10.5573/JSTS.2024.24.1.25