Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier
We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measu...
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Veröffentlicht in: | Journal of semiconductor technology and science 2024, 24(1), 115, pp.25-32 |
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Sprache: | eng |
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Zusammenfassung: | We have compared the electrical performance of a proposed normally-off GaN-based MIS-HEMTs employing ultrathin AlGaN barrier layer in the channel with those of conventional recessed-gate structure MIS-HEMTs. The proposed device exhibited much less density of interface states extracted from the measured capacitance-voltage characteristics, suggesting improved Al2O3/AlGaN interface. For corresponding three-terminal transistors, while the conventional reference device exhibited poor control of gate-to-source voltage on drain current with about 3 V hysteresis in the transfer curves, the proposed device showed well-behaved subthreshold characteristics with only 0.8 V hysteresis. Furthermore, the proposed device showed a much higher VTH of +5 V compared to +1 V of the conventional reference device. KCI Citation Count: 0 |
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ISSN: | 1598-1657 2233-4866 2233-4866 1598-1657 |
DOI: | 10.5573/JSTS.2024.24.1.25 |