Enhancing Performance of Dual-Gate FinFET with High-K Gate Dielectric Materials in 5 nm Technology: A Simulation Study

The rapid advancement in nanoscale devices demands innovative gate dielectric materials to replace traditional Silicon dioxide. This paper investigates the electrical behavior and performance of a dual-gate FinFET employing different high-K gate dielectric materials (Silicon dioxide, Hafnium oxide, Titanium oxide) through ATLAS 2D simulation in 5 nm technology. We analyze how these high-K gate dielectric materials influence the device, focusing on performance enhancement. The study highlights various key performance parameters ( I ON , I OFF , g m , g ds , R ON , TF, EV, V IL , V IH , N M L , N M H ) and reveals a significant performance improvement with HfO 2 dielectric material in the proposed Dual-Gate FinFET. Achieving impressive performance parameters ( I ON : 21.59 mA, I OFF : 21 μ A, Maximum net Electric field: 1221290 V/cm, g m ( m a x ) : 0.05187 S, g d s ( m a x ) : 0.03462 S, R O N ( m a x ) : 25.93 k Ω , TFmax: 5.02, G a i n max : 90.233, E V max : 67.532 V, V IL : 0.21 V, V IH : 0.4 V, N M L : 198 V, N M H : 600 V), this paper provides valuable insights for designing high-performance devices with HfO 2 dielectric material.