Use of negative capacitance to simulate the electrical characteristics in double-gate ferroelectric field-effect transistors

The surface potential and drain current of double-gate metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converted semiconductor surface potential and low subthres...

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Veröffentlicht in:	Current applied physics 2012, 12(6), , pp.1591-1595
Hauptverfasser:	Xiao, Y.G., Tang, M.H., Xiong, Y., Li, J.C., Cheng, C.P., Jiang, B., Cai, H.Q., Tang, Z.H., Lv, X.S., Gu, X.C., Zhou, Y.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Electric potential Ferroelectric materials Ferroelectricity guidelines Metal-ferroelectric-insulator-semiconductor (MFIS) Negative capacitance Reduction Semiconductor devices Semiconductors Subthreshold swing temperature Transistors Up-converted 물리학
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The surface potential and drain current of double-gate metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistor were investigated by using the ferroelectric negative capacitance. The derived results demonstrated that the up-converted semiconductor surface potential and low subthreshold swing S = 34 (
ISSN:	1567-1739 1878-1675
DOI:	10.1016/j.cap.2012.05.008