Influence of oxygen ion drift on a negative difference behavior in a reset process of bipolar resistive switching
We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical compositi...
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Veröffentlicht in: | Current applied physics 2014, 14(3), , pp.355-358 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present the oxygen ion drift-based resistive switching features of TiOx/TiOy bi-layer homo-junctions. The TiOx layer in this bi-layer configuration was designed to have a stoichiometric chemical composition of TiO2, while the TiOy layer was designed to have a non-stoichiometric chemical composition. X-ray photoelectron spectroscopy measurements were carried out before and after electro-forming to determine the role of non-lattice oxygen content. Variation of the oxygen ion content in the TiO2 layers resulted in changes in the on/off ratio and increased the non-lattice oxygen content. A possible switching mechanism based on oxygen ion content is discussed.
•A bipolar resistive switching cell has been fabricated with TiO2 bi-layer structure.•The TiO2 bi-layer structure consists with different oxygen contents.•Non-lattice oxygen ions were observed by X-ray photoelectron spectroscopy (XPS).•On/off ratio in BPS was controlled by the amount of oxygen ion in top TiOx layer. |
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ISSN: | 1567-1739 1878-1675 |
DOI: | 10.1016/j.cap.2013.11.029 |