Direct Ionization from Low-Energy Electrons in a Highly-Scaled CMOS Process

Direct Ionization from Low-Energy Electrons in a Highly-Scaled CMOS Process

Low-energy-electron-induced single-event upsets are observed in a 22 nm fully-depleted silicon-on-insulator process at nominal and higher supply voltages. Electron dose enhancement was also observed.

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Bibliographische Detailangaben
Hauptverfasser: Casey, Megan C, Stansberry, Scott, Breeding, Matthew L, Reed, Robert A, Pellish, Jonathan A
Format: Other
Sprache:eng
Schlagworte:
Space Radiation
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Zusammenfassung:Low-energy-electron-induced single-event upsets are observed in a 22 nm fully-depleted silicon-on-insulator process at nominal and higher supply voltages. Electron dose enhancement was also observed.