A Comparison of High-Energy Electron and Cobalt-60 Gamma-Ray Radiation Testing

In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, a...

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Hauptverfasser: Boutte, Alvin J., Campola, Michael J., Carts, Martin A., Wilcox, Edward P., Marshall, Cheryl J., Phan, Anthony M., Pellish, Jonathan A., Powell, Wesley A., Xapsos, Michael A.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In this paper, a comparison between the effects of irradiating microelectronics with high energy electrons and Cobalt-60 gamma-rays is examined. Additionally, the effect of electron energy is also discussed. A variety of part types are investigated, including discrete bipolar transistors, hybrids, and junction field effect transistors