Prolonged 500 C Operation of 6H-SiC JFET Integrated Circuitry

Prolonged 500 C Operation of 6H-SiC JFET Integrated Circuitry

This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 degC with less than 10% degradation in l...

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Bibliographische Detailangaben
Hauptverfasser: Neudeck, Philip G., Spry, David J., Chen, Liang-Yu, Chang, Carl W., Beheim, Glenn M., Okojie, Robert S., Evans, Laura J., Meredith, Roger D., Ferrier, Terry L., Krasowski, Michael J., Prokop, Norman F., Lukco, Dorothy
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electronics And Electrical Engineering
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Zusammenfassung:This paper updates the long-term 500 C electrical testing results from 6H-SiC junction field effect transistors (JFETs) and small integrated circuits that were introduced at ICSCRM-2007. Two packaged JFETs have now been operated in excess of 7000 hours at 500 degC with less than 10% degradation in linear I-V characteristics. Several simple digital and analog demonstration integrated circuits successfully operated for 2000-6500 hours at 500 C before failure.