Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surf...

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Bibliographische Detailangaben
Hauptverfasser: Hoenk, Michael E., Nikzad, Shoulch, Jones, Todd J., Greer, Frank, Carver, Alexander G.
Format: Report
Sprache:eng
Schlagworte:
Chemistry And Materials (General)
Electronics And Electrical Engineering
Solid-State Physics
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Zusammenfassung:Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.