Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

Combining broad-beam circuit level SEU response with ion microprobe tests on single silicon germanium heterojunction bipolar transistors allows for a better understanding of the charge collection mechanisms responsible for SEU response of HBT technology.

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Bibliographische Detailangaben
Hauptverfasser: Reed, Robert A, Marshall, Paul W, Pickel, Jim, Carts, Martin A, Irwin, Tim, Niu, Guofu, Cressler, John, Krithivasan, Ramkumar, Fritz, Karl, Riggs, Pam
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Electronics And Electrical Engineering
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Zusammenfassung:Combining broad-beam circuit level SEU response with ion microprobe tests on single silicon germanium heterojunction bipolar transistors allows for a better understanding of the charge collection mechanisms responsible for SEU response of HBT technology.