A study of nitride devices for computer memory applications
Metal-nitride-oxide-silicon /MNOS/ capacitors act like metal-nitride-silicon /MNS/ capacitors with extra interface where sheet of charge can be stored in slow states. Flatband voltage shifts over a wide range by adjusting store charge density.
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| Format: | Report |
| Sprache: | eng |
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| Zusammenfassung: | Metal-nitride-oxide-silicon /MNOS/ capacitors act like metal-nitride-silicon /MNS/ capacitors with extra interface where sheet of charge can be stored in slow states. Flatband voltage shifts over a wide range by adjusting store charge density. |
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