Study of Valence Electronic Bond Character through Kinematical Structure Parameters in Compton Scattering B(r)-Function of Semiconductors

A real space B(r) function of valence electron system in semiconductor is a function defined by the Fourier inversion transform of the valence electron momentum density distribution p(q), which is a quantity having direct connection with the Compton profile J(qz). The B(r) function can be described in terms of an autocorrelation function among the valence electron wave functions. By applying the Taylor-Maclaurin expansion method to the autocorrelative expression of the B(r) function, it has been shown that the fundamental kinematical structure parameters of the electron system such as electron density, total momentum, total kinetic energy, etc. can be related systematically to the expansion coefficients. Using this fact, a possibility to discuss valence electronic bond character through a particularly sensitive relation between the kinetic energy density parameter in B(r) function and degree of locality in electron distribution has been studied under an example of semiconductor series of Ge, GaAs and ZnSe.