A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes

A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes

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Veröffentlicht in:ETRI journal 1993-10, Vol.15 (2), p.10-25
1. Verfasser: Jong-Son Lyu
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Sprache:kor
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title A New Method for Extracting Interface Trap Density in Short-Channel MOSFETs from Substrate-Bias-Dependent Subthreshold Slopes
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