Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode

The impact of pulse polarity on the performance of SiGeAsSe-GeSbTe 1S1R cell is studied. Reversing the Write polarity leads to increased memory window with possibility of multi-level programming. The Write current can be reduced down to 1e8) and retention characteristics are maintained.

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Bibliographische Detailangaben
1. Verfasser: Ravsher, Taras
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The impact of pulse polarity on the performance of SiGeAsSe-GeSbTe 1S1R cell is studied. Reversing the Write polarity leads to increased memory window with possibility of multi-level programming. The Write current can be reduced down to 1e8) and retention characteristics are maintained.
ISSN:2158-9682