Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor

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Veröffentlicht in:	IEEE ELECTRON DEVICE LETTERS 2021-09, Vol.42 (9), p.1280-1283
Hauptverfasser:	Min, Jinhong, Ronchi, Nicolo, McMitchell, Sean R.C, O'Sullivan, Barry, Banerjee, Kaustuv, Van den Bosch, Geert, Van Houdt, Jan, Shin, Changhwan
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Sprache:	eng
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container_end_page	1283
container_issue	9
container_start_page	1280
container_title	IEEE ELECTRON DEVICE LETTERS
container_volume	42
creator	Min, Jinhong Ronchi, Nicolo McMitchell, Sean R.C O'Sullivan, Barry Banerjee, Kaustuv Van den Bosch, Geert Van Houdt, Jan Shin, Changhwan
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format	Article
fullrecord	<record><control><sourceid>kuleuven</sourceid><recordid>TN_cdi_kuleuven_dspace_20_500_12942_698972</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20_500_12942_698972</sourcerecordid><originalsourceid>FETCH-kuleuven_dspace_20_500_12942_6989723</originalsourceid><addsrcrecordid>eNqVjUFOwzAQRb0AqYX2DrNGCnUctyFbUEJZgdTuLSsZty6pHc04iOOTSj1AWX096T39OzGXpc6zIpebmXhgPkmZa13quaAvigey51VNlhF27RHPCC4S7MZhIGT24QAfISE52yLsyQ7wjgHJJh8D-ABb96my16nuoEGiiD22iXwLjce-g9q5iS9hYM8p0kLcO9szLq_7KJ6aev-2zb7HHscfDKbjYfoySpq1lCZXlVZmU71UpSr-KT_fLJv0m4o_s5lbrg</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor</title><source>Lirias (KU Leuven Association)</source><source>IEEE Electronic Library (IEL)</source><creator>Min, Jinhong ; Ronchi, Nicolo ; McMitchell, Sean R.C ; O'Sullivan, Barry ; Banerjee, Kaustuv ; Van den Bosch, Geert ; Van Houdt, Jan ; Shin, Changhwan</creator><creatorcontrib>Min, Jinhong ; Ronchi, Nicolo ; McMitchell, Sean R.C ; O'Sullivan, Barry ; Banerjee, Kaustuv ; Van den Bosch, Geert ; Van Houdt, Jan ; Shin, Changhwan</creatorcontrib><identifier>ISSN: 0741-3106</identifier><language>eng</language><publisher>IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC</publisher><ispartof>IEEE ELECTRON DEVICE LETTERS, 2021-09, Vol.42 (9), p.1280-1283</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,315,778,782,27849</link.rule.ids></links><search><creatorcontrib>Min, Jinhong</creatorcontrib><creatorcontrib>Ronchi, Nicolo</creatorcontrib><creatorcontrib>McMitchell, Sean R.C</creatorcontrib><creatorcontrib>O'Sullivan, Barry</creatorcontrib><creatorcontrib>Banerjee, Kaustuv</creatorcontrib><creatorcontrib>Van den Bosch, Geert</creatorcontrib><creatorcontrib>Van Houdt, Jan</creatorcontrib><creatorcontrib>Shin, Changhwan</creatorcontrib><title>Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor</title><title>IEEE ELECTRON DEVICE LETTERS</title><issn>0741-3106</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>FZOIL</sourceid><recordid>eNqVjUFOwzAQRb0AqYX2DrNGCnUctyFbUEJZgdTuLSsZty6pHc04iOOTSj1AWX096T39OzGXpc6zIpebmXhgPkmZa13quaAvigey51VNlhF27RHPCC4S7MZhIGT24QAfISE52yLsyQ7wjgHJJh8D-ABb96my16nuoEGiiD22iXwLjce-g9q5iS9hYM8p0kLcO9szLq_7KJ6aev-2zb7HHscfDKbjYfoySpq1lCZXlVZmU71UpSr-KT_fLJv0m4o_s5lbrg</recordid><startdate>202109</startdate><enddate>202109</enddate><creator>Min, Jinhong</creator><creator>Ronchi, Nicolo</creator><creator>McMitchell, Sean R.C</creator><creator>O'Sullivan, Barry</creator><creator>Banerjee, Kaustuv</creator><creator>Van den Bosch, Geert</creator><creator>Van Houdt, Jan</creator><creator>Shin, Changhwan</creator><general>IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC</general><scope>FZOIL</scope></search><sort><creationdate>202109</creationdate><title>Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor</title><author>Min, Jinhong ; Ronchi, Nicolo ; McMitchell, Sean R.C ; O'Sullivan, Barry ; Banerjee, Kaustuv ; Van den Bosch, Geert ; Van Houdt, Jan ; Shin, Changhwan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kuleuven_dspace_20_500_12942_6989723</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Min, Jinhong</creatorcontrib><creatorcontrib>Ronchi, Nicolo</creatorcontrib><creatorcontrib>McMitchell, Sean R.C</creatorcontrib><creatorcontrib>O'Sullivan, Barry</creatorcontrib><creatorcontrib>Banerjee, Kaustuv</creatorcontrib><creatorcontrib>Van den Bosch, Geert</creatorcontrib><creatorcontrib>Van Houdt, Jan</creatorcontrib><creatorcontrib>Shin, Changhwan</creatorcontrib><collection>Lirias (KU Leuven Association)</collection><jtitle>IEEE ELECTRON DEVICE LETTERS</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Min, Jinhong</au><au>Ronchi, Nicolo</au><au>McMitchell, Sean R.C</au><au>O'Sullivan, Barry</au><au>Banerjee, Kaustuv</au><au>Van den Bosch, Geert</au><au>Van Houdt, Jan</au><au>Shin, Changhwan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor</atitle><jtitle>IEEE ELECTRON DEVICE LETTERS</jtitle><date>2021-09</date><risdate>2021</risdate><volume>42</volume><issue>9</issue><spage>1280</spage><epage>1283</epage><pages>1280-1283</pages><issn>0741-3106</issn><pub>IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC</pub><oa>free_for_read</oa></addata></record>
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issn	0741-3106
language	eng
recordid	cdi_kuleuven_dspace_20_500_12942_698972
source	Lirias (KU Leuven Association); IEEE Electronic Library (IEL)
title	Program/Erase Scheme for Suppressing Interface Trap Generation in HfO2-Based Ferroelectric Field Effect Transistor
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T09%3A39%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kuleuven&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Program/Erase%20Scheme%20for%20Suppressing%20Interface%20Trap%20Generation%20in%20HfO2-Based%20Ferroelectric%20Field%20Effect%20Transistor&rft.jtitle=IEEE%20ELECTRON%20DEVICE%20LETTERS&rft.au=Min,%20Jinhong&rft.date=2021-09&rft.volume=42&rft.issue=9&rft.spage=1280&rft.epage=1283&rft.pages=1280-1283&rft.issn=0741-3106&rft_id=info:doi/&rft_dat=%3Ckuleuven%3E20_500_12942_698972%3C/kuleuven%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true