Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability
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| Veröffentlicht in: | MICROELECTRONICS RELIABILITY 2020-12, Vol.115 |
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| creator | Putcha, Vamsi Franco, Jacopo Vais, Abhitosh Kaczer, Ben Xie, Qi Maes, Jan Willem Tang, Fu Givens, Michael Collaert, Nadine Linten, Dimitri Groeseneken, Guido |
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| identifier | ISSN: 0026-2714 |
| ispartof | MICROELECTRONICS RELIABILITY, 2020-12, Vol.115 |
| issn | 0026-2714 |
| language | eng |
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| source | Lirias (KU Leuven Association); Elsevier ScienceDirect Journals |
| title | Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability |
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