Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions

Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions

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Veröffentlicht in:IEEE TRANSACTIONS ON ELECTRON DEVICES 2021-04, Vol.68 (4), p.1454-1460
Hauptverfasser: Vandemaele, Michiel, Franco, Jacopo, Tyaginov, Stanislav, Groeseneken, Guido, Kaczer, Ben
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container_end_page 1460
container_issue 4
container_start_page 1454
container_title IEEE TRANSACTIONS ON ELECTRON DEVICES
container_volume 68
creator Vandemaele, Michiel
Franco, Jacopo
Tyaginov, Stanislav
Groeseneken, Guido
Kaczer, Ben
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fullrecord <record><control><sourceid>kuleuven</sourceid><recordid>TN_cdi_kuleuven_dspace_123456789_674278</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>123456789_674278</sourcerecordid><originalsourceid>FETCH-kuleuven_dspace_123456789_6742783</originalsourceid><addsrcrecordid>eNqNTcsKwjAQzEHB5z_szYMUtaltPWpVehHEx7nEdpVoSCSbiuLP24of4Glm57HTYO3xeBJ7Mx7zFusQXaszDAK_zd4bU6CS-gLmDDu8o3BYwHp1gNQ4LxHWSrSwdxaJQOgC5lqjUJC8coUER6qre-mlsDCVu5REJpfCSaNHW0EkH18OK4328qp9Z-WprDXqseZZKML-D7tsUA0nqXcrFZYP1FlBd5FjNvF5MA2jeJaFUeBHMe-y4X_JzD0d___vB6iIW_k</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions</title><source>Lirias (KU Leuven Association)</source><source>IEEE Electronic Library (IEL)</source><creator>Vandemaele, Michiel ; Franco, Jacopo ; Tyaginov, Stanislav ; Groeseneken, Guido ; Kaczer, Ben</creator><creatorcontrib>Vandemaele, Michiel ; Franco, Jacopo ; Tyaginov, Stanislav ; Groeseneken, Guido ; Kaczer, Ben</creatorcontrib><identifier>ISSN: 0018-9383</identifier><language>eng</language><publisher>IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC</publisher><ispartof>IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021-04, Vol.68 (4), p.1454-1460</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,315,780,784,27858</link.rule.ids></links><search><creatorcontrib>Vandemaele, Michiel</creatorcontrib><creatorcontrib>Franco, Jacopo</creatorcontrib><creatorcontrib>Tyaginov, Stanislav</creatorcontrib><creatorcontrib>Groeseneken, Guido</creatorcontrib><creatorcontrib>Kaczer, Ben</creatorcontrib><title>Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions</title><title>IEEE TRANSACTIONS ON ELECTRON DEVICES</title><issn>0018-9383</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>FZOIL</sourceid><recordid>eNqNTcsKwjAQzEHB5z_szYMUtaltPWpVehHEx7nEdpVoSCSbiuLP24of4Glm57HTYO3xeBJ7Mx7zFusQXaszDAK_zd4bU6CS-gLmDDu8o3BYwHp1gNQ4LxHWSrSwdxaJQOgC5lqjUJC8coUER6qre-mlsDCVu5REJpfCSaNHW0EkH18OK4328qp9Z-WprDXqseZZKML-D7tsUA0nqXcrFZYP1FlBd5FjNvF5MA2jeJaFUeBHMe-y4X_JzD0d___vB6iIW_k</recordid><startdate>202104</startdate><enddate>202104</enddate><creator>Vandemaele, Michiel</creator><creator>Franco, Jacopo</creator><creator>Tyaginov, Stanislav</creator><creator>Groeseneken, Guido</creator><creator>Kaczer, Ben</creator><general>IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC</general><scope>FZOIL</scope></search><sort><creationdate>202104</creationdate><title>Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions</title><author>Vandemaele, Michiel ; Franco, Jacopo ; Tyaginov, Stanislav ; Groeseneken, Guido ; Kaczer, Ben</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kuleuven_dspace_123456789_6742783</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vandemaele, Michiel</creatorcontrib><creatorcontrib>Franco, Jacopo</creatorcontrib><creatorcontrib>Tyaginov, Stanislav</creatorcontrib><creatorcontrib>Groeseneken, Guido</creatorcontrib><creatorcontrib>Kaczer, Ben</creatorcontrib><collection>Lirias (KU Leuven Association)</collection><jtitle>IEEE TRANSACTIONS ON ELECTRON DEVICES</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vandemaele, Michiel</au><au>Franco, Jacopo</au><au>Tyaginov, Stanislav</au><au>Groeseneken, Guido</au><au>Kaczer, Ben</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions</atitle><jtitle>IEEE TRANSACTIONS ON ELECTRON DEVICES</jtitle><date>2021-04</date><risdate>2021</risdate><volume>68</volume><issue>4</issue><spage>1454</spage><epage>1460</epage><pages>1454-1460</pages><issn>0018-9383</issn><pub>IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC</pub><oa>free_for_read</oa></addata></record>
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title Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-10T05%3A22%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kuleuven&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Modeling%20of%20Repeated%20FET%20Hot-Carrier%20Stress%20and%20Anneal%20Cycles%20Using%20Si-H%20Bond%20Dissociation/Passivation%20Energy%20Distributions&rft.jtitle=IEEE%20TRANSACTIONS%20ON%20ELECTRON%20DEVICES&rft.au=Vandemaele,%20Michiel&rft.date=2021-04&rft.volume=68&rft.issue=4&rft.spage=1454&rft.epage=1460&rft.pages=1454-1460&rft.issn=0018-9383&rft_id=info:doi/&rft_dat=%3Ckuleuven%3E123456789_674278%3C/kuleuven%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true