Calculation of the current response of the spatially modulated light CMOS detector
We present an analytical model that allows to calculate the current response of a spatially modulated light CMOS detector (SML-detector) and compare this response with the response of a traditional CMOS photodetector. It is shown that the SML detector already yields a three orders of magnitude faste...
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Veröffentlicht in: | IEEE Transactions on Electron Devices 2001-09, Vol.48 (9), p.1892-1902 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present an analytical model that allows to calculate the current response of a spatially modulated light CMOS detector (SML-detector) and compare this response with the response of a traditional CMOS photodetector. It is shown that the SML detector already yields a three orders of magnitude faster response time than a traditional CMOS detector in a 0.25 mum CMOS technology. This response time will further decrease as CM-OS technology evolves. This analytical expression is compared with a numerical solution of the diffusion equation and with experimental results. Both show an excellent correspondence. Therefore we can conclude that the SML-detector is the solution of choice for cheap, CMOS-compatible receivers in integrated opto-electronic systems. |
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ISSN: | 0018-9383 |