Thermal recovery from stress-induced high-k dielectric film degradation

Thermal recovery from stress-induced high-k dielectric film degradation

This work presents a detailed analysis of the ability of high-κ materials to recover from Fowler-Nordheim stress-induced degradation. Forming gas and high temperature rapid thermal anneal steps are compared to determine their efficiency at trap recovery. The annealing responses of the technologicall...

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Veröffentlicht in:Journal of Applied Physics 2007-02, Vol.101 (4), p.1-6
Hauptverfasser: O'Sullivan, Barry J, Pantisano, Luigi, Roussel, Philippe, Degraeve, Robin, Groeseneken, Guido, De Gendt, Stefan, Heyns, Marc
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Sprache:eng
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Zusammenfassung:This work presents a detailed analysis of the ability of high-κ materials to recover from Fowler-Nordheim stress-induced degradation. Forming gas and high temperature rapid thermal anneal steps are compared to determine their efficiency at trap recovery. The annealing responses of the technologically relevant HfSiON and HfO₂ materials (equivalent oxide thickness
ISSN:0021-8979