Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

Microwave Characterization of Ba-Substituted PZT and ZnO Thin Films

The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The ab...

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Veröffentlicht in:IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL 2018-05, Vol.65 (5), p.881-888
Hauptverfasser: Tierno, Davide, Dekkers, Matthijn, Wittendorp, Paul, Sun, Xiao, Bayer, Samuel C, King, Seth T, Van Elshocht, Sven, Heyns, Marc, Radu, Iuliana P, Adelmann, Christoph
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Sprache:eng
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Zusammenfassung:The microwave dielectric properties of (Ba0.1Pb0.9)(Zr0.52Ti0.48)O3 (BPZT) and ZnO thin films with thicknesses below were investigated. No significant dielectric relaxation was observed for both BPZT and ZnO up to 30 GHz. The intrinsic dielectric constant of BPZT was as high as 980 at 30 GHz. The absence of strong dielectric dispersion and loss peaks in the studied frequency range can be linked to the small grain diameters in these ultrathin films.
ISSN:0885-3010