Self-aligned flexible organic thin-film transistors with gates patterned by nano-imprint lithography

Many applications that rely on organic electronic circuits still suffer from the limited switching speed of their basic elements - the organic thin film transistor (OTFT). For a given set of materials the OTFT speed scales inversely with the square of the channel length, the parasitic gate overlap capacitance, and the contact resistance. For maximising speed we pattern transistor channels with lengths from 10 μm down to the sub-micrometre regime by industrially scalable UV-nanoimprint lithography. The reduction of the overlap capacitance is achieved by minimising the source-drain to gate overlap lengths to values as low as 0.2 μm by self-aligned electrode definition using substrate reverse side exposure. Pentacene based organic thin film transistors with an exceptionally low line edge roughness