Small-signal microwave measurements and modeling of GaN FET devices manufactured by ITME

© 2015, Kluwer Academic Publishers. All Rights Reserved. We present results of small-signal measurements and modeling of GaN FET devices anufactured by Institute of Electronics Materials Technology (ITME). The devices have 500 nm gate length and 100 μm gate width and are grown on 350 μm sapphire substrate. We measured scattering parameters of the devices on-wafer in the frequency range 0.01-15 GHz, and then extracted parameters of their small-signal equivalent circuits. These results show that the devices have repeatable parameters and are capable of delivering at least 14.4 dB of unilateral gain in S-band with fmax of at least 23 GHz.