W-band differential power amplifier design in 45 nm low power CMOS
In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between...
Gespeichert in:
| Veröffentlicht in: | Solid-State Electronics 2013-04, Vol.82, p.41-45 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 45 |
|---|---|
| container_issue | |
| container_start_page | 41 |
| container_title | Solid-State Electronics |
| container_volume | 82 |
| creator | Deferm, Noël Osorio, Juan de Graauw, Anton Reynaert, Patrick |
| description | In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between both topologies are discussed. Efficiency, reliability, linearity and stability are key parameters in this discussion. The PA's were designed in a 45 nm low power CMOS process. Low loss transformers with excellent inter-stage common mode rejection are utilized to implement the matching networks. © 2013 Elsevier Ltd. All rights reserved. |
| format | Article |
| fullrecord | <record><control><sourceid>kuleuven</sourceid><recordid>TN_cdi_kuleuven_dspace_123456789_395422</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>123456789_395422</sourcerecordid><originalsourceid>FETCH-kuleuven_dspace_123456789_3954223</originalsourceid><addsrcrecordid>eNqVyrsOgjAYQOEOmoiXd-jmYEh6AYRVonExDpo4NtX-NdVSGgri4-vAA-h0zvCNUEQIz2NKCZ2gaQgPQgjLKInQ5hJfpVNYGa2hAdcaabGve2iwrLw12nxPQTB3h43DSYpdhW3dD6Y8HE9zNNbSBlgMnaHlbnsu9_Gzs9C9wAkVvLyBoIwnabbOC8GLNGGM_yNXv0nRvlv-AbFzRmc</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>W-band differential power amplifier design in 45 nm low power CMOS</title><source>Lirias (KU Leuven Association)</source><source>Elsevier ScienceDirect Journals</source><creator>Deferm, Noël ; Osorio, Juan ; de Graauw, Anton ; Reynaert, Patrick</creator><creatorcontrib>Deferm, Noël ; Osorio, Juan ; de Graauw, Anton ; Reynaert, Patrick</creatorcontrib><description>In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between both topologies are discussed. Efficiency, reliability, linearity and stability are key parameters in this discussion. The PA's were designed in a 45 nm low power CMOS process. Low loss transformers with excellent inter-stage common mode rejection are utilized to implement the matching networks. © 2013 Elsevier Ltd. All rights reserved.</description><identifier>ISSN: 0038-1101</identifier><language>eng</language><publisher>Pergamon Press</publisher><ispartof>Solid-State Electronics, 2013-04, Vol.82, p.41-45</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,315,776,780,27837</link.rule.ids></links><search><creatorcontrib>Deferm, Noël</creatorcontrib><creatorcontrib>Osorio, Juan</creatorcontrib><creatorcontrib>de Graauw, Anton</creatorcontrib><creatorcontrib>Reynaert, Patrick</creatorcontrib><title>W-band differential power amplifier design in 45 nm low power CMOS</title><title>Solid-State Electronics</title><description>In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between both topologies are discussed. Efficiency, reliability, linearity and stability are key parameters in this discussion. The PA's were designed in a 45 nm low power CMOS process. Low loss transformers with excellent inter-stage common mode rejection are utilized to implement the matching networks. © 2013 Elsevier Ltd. All rights reserved.</description><issn>0038-1101</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>FZOIL</sourceid><recordid>eNqVyrsOgjAYQOEOmoiXd-jmYEh6AYRVonExDpo4NtX-NdVSGgri4-vAA-h0zvCNUEQIz2NKCZ2gaQgPQgjLKInQ5hJfpVNYGa2hAdcaabGve2iwrLw12nxPQTB3h43DSYpdhW3dD6Y8HE9zNNbSBlgMnaHlbnsu9_Gzs9C9wAkVvLyBoIwnabbOC8GLNGGM_yNXv0nRvlv-AbFzRmc</recordid><startdate>201304</startdate><enddate>201304</enddate><creator>Deferm, Noël</creator><creator>Osorio, Juan</creator><creator>de Graauw, Anton</creator><creator>Reynaert, Patrick</creator><general>Pergamon Press</general><scope>FZOIL</scope></search><sort><creationdate>201304</creationdate><title>W-band differential power amplifier design in 45 nm low power CMOS</title><author>Deferm, Noël ; Osorio, Juan ; de Graauw, Anton ; Reynaert, Patrick</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kuleuven_dspace_123456789_3954223</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Deferm, Noël</creatorcontrib><creatorcontrib>Osorio, Juan</creatorcontrib><creatorcontrib>de Graauw, Anton</creatorcontrib><creatorcontrib>Reynaert, Patrick</creatorcontrib><collection>Lirias (KU Leuven Association)</collection><jtitle>Solid-State Electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Deferm, Noël</au><au>Osorio, Juan</au><au>de Graauw, Anton</au><au>Reynaert, Patrick</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>W-band differential power amplifier design in 45 nm low power CMOS</atitle><jtitle>Solid-State Electronics</jtitle><date>2013-04</date><risdate>2013</risdate><volume>82</volume><spage>41</spage><epage>45</epage><pages>41-45</pages><issn>0038-1101</issn><abstract>In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between both topologies are discussed. Efficiency, reliability, linearity and stability are key parameters in this discussion. The PA's were designed in a 45 nm low power CMOS process. Low loss transformers with excellent inter-stage common mode rejection are utilized to implement the matching networks. © 2013 Elsevier Ltd. All rights reserved.</abstract><pub>Pergamon Press</pub></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0038-1101 |
| ispartof | Solid-State Electronics, 2013-04, Vol.82, p.41-45 |
| issn | 0038-1101 |
| language | eng |
| recordid | cdi_kuleuven_dspace_123456789_395422 |
| source | Lirias (KU Leuven Association); Elsevier ScienceDirect Journals |
| title | W-band differential power amplifier design in 45 nm low power CMOS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-09T01%3A23%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kuleuven&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=W-band%20differential%20power%20amplifier%20design%20in%2045%20nm%20low%20power%20CMOS&rft.jtitle=Solid-State%20Electronics&rft.au=Deferm,%20No%C3%ABl&rft.date=2013-04&rft.volume=82&rft.spage=41&rft.epage=45&rft.pages=41-45&rft.issn=0038-1101&rft_id=info:doi/&rft_dat=%3Ckuleuven%3E123456789_395422%3C/kuleuven%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |