W-band differential power amplifier design in 45 nm low power CMOS

In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between...

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Veröffentlicht in:Solid-State Electronics 2013-04, Vol.82, p.41-45
Hauptverfasser: Deferm, Noël, Osorio, Juan, de Graauw, Anton, Reynaert, Patrick
Format: Artikel
Sprache:eng
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Zusammenfassung:In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between both topologies are discussed. Efficiency, reliability, linearity and stability are key parameters in this discussion. The PA's were designed in a 45 nm low power CMOS process. Low loss transformers with excellent inter-stage common mode rejection are utilized to implement the matching networks. © 2013 Elsevier Ltd. All rights reserved.
ISSN:0038-1101