W-band differential power amplifier design in 45 nm low power CMOS
In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between...
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Veröffentlicht in: | Solid-State Electronics 2013-04, Vol.82, p.41-45 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this paper, a comparison is made between two 94 GHz differential CMOS power amplifiers. Both a cascode and common source PA are designed and measured. They both show that excellent mm-wave performance can be achieved in a nanometer scale CMOS technology. Design and performance trade-offs between both topologies are discussed. Efficiency, reliability, linearity and stability are key parameters in this discussion. The PA's were designed in a 45 nm low power CMOS process. Low loss transformers with excellent inter-stage common mode rejection are utilized to implement the matching networks. © 2013 Elsevier Ltd. All rights reserved. |
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ISSN: | 0038-1101 |