Modeling and Exploration of Novel Non-Volatile Memory Technologies (Modeling en exploratie voor nieuwe niet-vluchtig geheugen technologieën)

Modeling and Exploration of Novel Non-Volatile Memory Technologies (Modeling en exploratie voor nieuwe niet-vluchtig geheugen technologieën)

Using the proposed heuristic methodology in this PhD work of the gate irregularity and its verification against TCAD simulations. Using the proposed model it is possible to benchmark the lithography processes versus error correcting codes improving the process technologies by either introducing the...

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creator Poliakov, Pavel
description Using the proposed heuristic methodology in this PhD work of the gate irregularity and its verification against TCAD simulations. Using the proposed model it is possible to benchmark the lithography processes versus error correcting codes improving the process technologies by either introducing the smoothing techniques or by increasing ECCs complexities.
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fullrecord <record><control><sourceid>kuleuven_FZOIL</sourceid><recordid>TN_cdi_kuleuven_dspace_123456789_355094</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>123456789_355094</sourcerecordid><originalsourceid>FETCH-kuleuven_dspace_123456789_3550943</originalsourceid><addsrcrecordid>eNqVjE1qwlAURjNxILV7uDMrJVBN0uq4WJzoSJyGkHy-PHp7ryTvpboIV-Iy3JgR_Jnq5DvwcTjdYD_XAmzFUCYFTbcb1ipzVoV0TQttwO1KuFJuXwbN8afVjpbIS1FWY1HT260BIVwToEa1IrHw_zjDhQ37vHTWkEEJb1rb3TvHgwx6QWedcY3XC1-C_s90-T0Lfz3DN5C0qDdZjnQ4iuLk82s8SaMk-ZjE0TPm-2Nm6rYuOgGkOWBA</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>dissertation</recordtype></control><display><type>dissertation</type><title>Modeling and Exploration of Novel Non-Volatile Memory Technologies (Modeling en exploratie voor nieuwe niet-vluchtig geheugen technologieën)</title><source>Lirias (KU Leuven Association)</source><creator>Poliakov, Pavel</creator><creatorcontrib>Poliakov, Pavel ; Dehaene, Wim</creatorcontrib><description>Using the proposed heuristic methodology in this PhD work of the gate irregularity and its verification against TCAD simulations. Using the proposed model it is possible to benchmark the lithography processes versus error correcting codes improving the process technologies by either introducing the smoothing techniques or by increasing ECCs complexities.</description><language>dut</language><creationdate>2012</creationdate><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>311,315,776,27839</link.rule.ids><linktorsrc>$$Uhttps://lirias.kuleuven.be/handle/123456789/355094$$EView_record_in_KU_Leuven_Association$$FView_record_in_$$GKU_Leuven_Association</linktorsrc></links><search><creatorcontrib>Poliakov, Pavel</creatorcontrib><title>Modeling and Exploration of Novel Non-Volatile Memory Technologies (Modeling en exploratie voor nieuwe niet-vluchtig geheugen technologieën)</title><description>Using the proposed heuristic methodology in this PhD work of the gate irregularity and its verification against TCAD simulations. Using the proposed model it is possible to benchmark the lithography processes versus error correcting codes improving the process technologies by either introducing the smoothing techniques or by increasing ECCs complexities.</description><fulltext>true</fulltext><rsrctype>dissertation</rsrctype><creationdate>2012</creationdate><recordtype>dissertation</recordtype><sourceid>FZOIL</sourceid><recordid>eNqVjE1qwlAURjNxILV7uDMrJVBN0uq4WJzoSJyGkHy-PHp7ryTvpboIV-Iy3JgR_Jnq5DvwcTjdYD_XAmzFUCYFTbcb1ipzVoV0TQttwO1KuFJuXwbN8afVjpbIS1FWY1HT260BIVwToEa1IrHw_zjDhQ37vHTWkEEJb1rb3TvHgwx6QWedcY3XC1-C_s90-T0Lfz3DN5C0qDdZjnQ4iuLk82s8SaMk-ZjE0TPm-2Nm6rYuOgGkOWBA</recordid><startdate>20120910</startdate><enddate>20120910</enddate><creator>Poliakov, Pavel</creator><scope>FZOIL</scope></search><sort><creationdate>20120910</creationdate><title>Modeling and Exploration of Novel Non-Volatile Memory Technologies (Modeling en exploratie voor nieuwe niet-vluchtig geheugen technologieën)</title><author>Poliakov, Pavel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kuleuven_dspace_123456789_3550943</frbrgroupid><rsrctype>dissertations</rsrctype><prefilter>dissertations</prefilter><language>dut</language><creationdate>2012</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Poliakov, Pavel</creatorcontrib><collection>Lirias (KU Leuven Association)</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Poliakov, Pavel</au><format>dissertation</format><genre>dissertation</genre><ristype>THES</ristype><Advisor>Dehaene, Wim</Advisor><btitle>Modeling and Exploration of Novel Non-Volatile Memory Technologies (Modeling en exploratie voor nieuwe niet-vluchtig geheugen technologieën)</btitle><date>2012-09-10</date><risdate>2012</risdate><abstract>Using the proposed heuristic methodology in this PhD work of the gate irregularity and its verification against TCAD simulations. Using the proposed model it is possible to benchmark the lithography processes versus error correcting codes improving the process technologies by either introducing the smoothing techniques or by increasing ECCs complexities.</abstract></addata></record>
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title Modeling and Exploration of Novel Non-Volatile Memory Technologies (Modeling en exploratie voor nieuwe niet-vluchtig geheugen technologieën)
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T13%3A16%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kuleuven_FZOIL&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft.genre=dissertation&rft.btitle=Modeling%20and%20Exploration%20of%20Novel%20Non-Volatile%20Memory%20Technologies%20(Modeling%20en%20exploratie%20voor%20nieuwe%20niet-vluchtig%20geheugen%20technologie%C3%ABn)&rft.au=Poliakov,%20Pavel&rft.date=2012-09-10&rft_id=info:doi/&rft_dat=%3Ckuleuven_FZOIL%3E123456789_355094%3C/kuleuven_FZOIL%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true