A Sub-1V Full CMOS Bandgap Voltage Reference with a Body Bias

In this paper, a low-power sub-1V bandgap voltage reference(sub-BGR) without any resistors and BJTs is presented. To reduce process variations without bipolar junction transistors(BJTs), a weighted Vgs structure is modified with a body bias for the generation of both complementary-to-absolute-temperature(CTAT) voltage and proportional-to-absolute-temperature(PTAT) voltage. Moreover, the proposed sub-BGR is operated in subthreshold region to minimize the power consumption. The proposed sub-BGR is implemented with a $0.18{\mu}m$ deep N-well (DNW) CMOS technology. The measured results show that the temperature variation of $55ppm/^{\circ}C$ is obtained with a temperature range from $-40^{\circ}C$ to $80^{\circ}C$. The power supply rejection ratio(PSRR) of -44 dB at 100 Hz is achieved while consuming total power of 38 nW at the supply voltage of 0.8 V. Measured output reference voltage is 435 mV and the active area is $150{\mu}m$ by $49{\mu}m$.