Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn

We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electron...

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Veröffentlicht in:Journal of semiconductor technology and science 2015, Vol.15 (2), p.243-248
Hauptverfasser: Makhniy, V.P, Sklyarchuk, V.M, Vorobiev, Yu.V, Horley, P.P
Format: Artikel
Sprache:kor
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Zusammenfassung:We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.
ISSN:1598-1657