The Structural-Dependent Characteristics of Rashba Spin Transports in In0.5Ga0.5As/In0.5Al0.5As Heterojunctions

The Structural-Dependent Characteristics of Rashba Spin Transports in In0.5Ga0.5As/In0.5Al0.5As Heterojunctions

The growth and characterization of In0.5Ga0.5As/In0.5Al0.5As narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface In0.5Ga0.5As channels of different thickn...

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Veröffentlicht in:Transactions on electrical and electronic materials 2011-08, Vol.12 (4), p.140
Hauptverfasser: Hyon Kwang Choi, Sook Hyun Hwang, Min Hyon Jeon
Format: Artikel
Sprache:kor
Schlagworte:
Magneto resistance
Narrow-gap semiconductor
Spin orbit coupling constant
Weak anti Localization
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Zusammenfassung:The growth and characterization of In0.5Ga0.5As/In0.5Al0.5As narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface In0.5Ga0.5As channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm In0.5Al0.5As cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.
ISSN:1229-7607