Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method

Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method

Cubic boron nitride (cBN) films were deposited by a magnetically enhanced activated reactive evaporation (ME-ARE) technique. Pulsed DC instead of r.f. power was used to bias the substrate. The effect of deposition parameters such as substrate bias voltage, plasma discharge current and gas flow ratio...

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Veröffentlicht in:Metals and materials international 2000-10, Vol.6 (5), p.467
Hauptverfasser: Eung Sun Byon, Sung Hun Lee, Gun Hwan Lee, Eung Jik Lee, Jae Hong Yoon, Katsuhisa Sugimoto, Chang Mo Sung, Sang Ro Lee
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cBN
cubic boron nitride
hardness
ME-ARE
transmission electron microscopy
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container_issue 5
container_start_page 467
container_title Metals and materials international
container_volume 6
creator Eung Sun Byon
Sung Hun Lee
Gun Hwan Lee
Eung Jik Lee
Jae Hong Yoon
Katsuhisa Sugimoto
Chang Mo Sung
Sang Ro Lee
description Cubic boron nitride (cBN) films were deposited by a magnetically enhanced activated reactive evaporation (ME-ARE) technique. Pulsed DC instead of r.f. power was used to bias the substrate. The effect of deposition parameters such as substrate bias voltage, plasma discharge current and gas flow ratio on the formation of cBN was investigated. BN mms were characterized by FTIR and TEM. CBN films with a high content of cubic phase were successfully synthesized. It was found that formation of cBN film requires the bombardment of ions with both high flux and high energy. TEM observation showed that the cBN film had grain sizes of 15-50 nm and that a non-cubic phase BN, 10-15 nm was initially grown.
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fullrecord <record><control><sourceid>kiss</sourceid><recordid>TN_cdi_kiss_primary_1681961</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><kiss_id>1681961</kiss_id><sourcerecordid>1681961</sourcerecordid><originalsourceid>FETCH-kiss_primary_16819613</originalsourceid><addsrcrecordid>eNp9jLEOgjAUADtoIlG-wOX9AAlIQDoqgbjgoLi4kALFvgjF9NUBv14GZ6fL5ZJbMCeIeOLxeBeumEuEte_vo5An3HfY_TppqyQhgdAtpEoY0Vhp8CMsjhrGDtJ3jQ0cRzPrGa3BVkKpUEOO_UBwI9QPmB9QZODB4ZJBIa0a2w1bdqIn6f64Zts8K9OT90Si6mVwEGaqgjgJeByE_-sXnNk7eA</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method</title><source>SpringerLink Journals - AutoHoldings</source><creator>Eung Sun Byon ; Sung Hun Lee ; Gun Hwan Lee ; Eung Jik Lee ; Jae Hong Yoon ; Katsuhisa Sugimoto ; Chang Mo Sung ; Sang Ro Lee</creator><creatorcontrib>Eung Sun Byon ; Sung Hun Lee ; Gun Hwan Lee ; Eung Jik Lee ; Jae Hong Yoon ; Katsuhisa Sugimoto ; Chang Mo Sung ; Sang Ro Lee</creatorcontrib><description>Cubic boron nitride (cBN) films were deposited by a magnetically enhanced activated reactive evaporation (ME-ARE) technique. Pulsed DC instead of r.f. power was used to bias the substrate. The effect of deposition parameters such as substrate bias voltage, plasma discharge current and gas flow ratio on the formation of cBN was investigated. BN mms were characterized by FTIR and TEM. CBN films with a high content of cubic phase were successfully synthesized. It was found that formation of cBN film requires the bombardment of ions with both high flux and high energy. TEM observation showed that the cBN film had grain sizes of 15-50 nm and that a non-cubic phase BN, 10-15 nm was initially grown.</description><identifier>ISSN: 1598-9623</identifier><language>kor</language><publisher>대한금속재료학회</publisher><subject>cBN ; cubic boron nitride ; hardness ; ME-ARE ; transmission electron microscopy</subject><ispartof>Metals and materials international, 2000-10, Vol.6 (5), p.467</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780</link.rule.ids></links><search><creatorcontrib>Eung Sun Byon</creatorcontrib><creatorcontrib>Sung Hun Lee</creatorcontrib><creatorcontrib>Gun Hwan Lee</creatorcontrib><creatorcontrib>Eung Jik Lee</creatorcontrib><creatorcontrib>Jae Hong Yoon</creatorcontrib><creatorcontrib>Katsuhisa Sugimoto</creatorcontrib><creatorcontrib>Chang Mo Sung</creatorcontrib><creatorcontrib>Sang Ro Lee</creatorcontrib><title>Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method</title><title>Metals and materials international</title><addtitle>Metals and Materials International (MMI)</addtitle><description>Cubic boron nitride (cBN) films were deposited by a magnetically enhanced activated reactive evaporation (ME-ARE) technique. Pulsed DC instead of r.f. power was used to bias the substrate. The effect of deposition parameters such as substrate bias voltage, plasma discharge current and gas flow ratio on the formation of cBN was investigated. BN mms were characterized by FTIR and TEM. CBN films with a high content of cubic phase were successfully synthesized. It was found that formation of cBN film requires the bombardment of ions with both high flux and high energy. TEM observation showed that the cBN film had grain sizes of 15-50 nm and that a non-cubic phase BN, 10-15 nm was initially grown.</description><subject>cBN</subject><subject>cubic boron nitride</subject><subject>hardness</subject><subject>ME-ARE</subject><subject>transmission electron microscopy</subject><issn>1598-9623</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNp9jLEOgjAUADtoIlG-wOX9AAlIQDoqgbjgoLi4kALFvgjF9NUBv14GZ6fL5ZJbMCeIeOLxeBeumEuEte_vo5An3HfY_TppqyQhgdAtpEoY0Vhp8CMsjhrGDtJ3jQ0cRzPrGa3BVkKpUEOO_UBwI9QPmB9QZODB4ZJBIa0a2w1bdqIn6f64Zts8K9OT90Si6mVwEGaqgjgJeByE_-sXnNk7eA</recordid><startdate>20001001</startdate><enddate>20001001</enddate><creator>Eung Sun Byon</creator><creator>Sung Hun Lee</creator><creator>Gun Hwan Lee</creator><creator>Eung Jik Lee</creator><creator>Jae Hong Yoon</creator><creator>Katsuhisa Sugimoto</creator><creator>Chang Mo Sung</creator><creator>Sang Ro Lee</creator><general>대한금속재료학회</general><scope>HZB</scope><scope>Q5X</scope></search><sort><creationdate>20001001</creationdate><title>Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method</title><author>Eung Sun Byon ; Sung Hun Lee ; Gun Hwan Lee ; Eung Jik Lee ; Jae Hong Yoon ; Katsuhisa Sugimoto ; Chang Mo Sung ; Sang Ro Lee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kiss_primary_16819613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>kor</language><creationdate>2000</creationdate><topic>cBN</topic><topic>cubic boron nitride</topic><topic>hardness</topic><topic>ME-ARE</topic><topic>transmission electron microscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Eung Sun Byon</creatorcontrib><creatorcontrib>Sung Hun Lee</creatorcontrib><creatorcontrib>Gun Hwan Lee</creatorcontrib><creatorcontrib>Eung Jik Lee</creatorcontrib><creatorcontrib>Jae Hong Yoon</creatorcontrib><creatorcontrib>Katsuhisa Sugimoto</creatorcontrib><creatorcontrib>Chang Mo Sung</creatorcontrib><creatorcontrib>Sang Ro Lee</creatorcontrib><collection>Korean Studies Information Service System (KISS)</collection><collection>Korean Studies Information Service System (KISS) B-Type</collection><jtitle>Metals and materials international</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Eung Sun Byon</au><au>Sung Hun Lee</au><au>Gun Hwan Lee</au><au>Eung Jik Lee</au><au>Jae Hong Yoon</au><au>Katsuhisa Sugimoto</au><au>Chang Mo Sung</au><au>Sang Ro Lee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method</atitle><jtitle>Metals and materials international</jtitle><addtitle>Metals and Materials International (MMI)</addtitle><date>2000-10-01</date><risdate>2000</risdate><volume>6</volume><issue>5</issue><spage>467</spage><pages>467-</pages><issn>1598-9623</issn><abstract>Cubic boron nitride (cBN) films were deposited by a magnetically enhanced activated reactive evaporation (ME-ARE) technique. Pulsed DC instead of r.f. power was used to bias the substrate. The effect of deposition parameters such as substrate bias voltage, plasma discharge current and gas flow ratio on the formation of cBN was investigated. BN mms were characterized by FTIR and TEM. CBN films with a high content of cubic phase were successfully synthesized. It was found that formation of cBN film requires the bombardment of ions with both high flux and high energy. TEM observation showed that the cBN film had grain sizes of 15-50 nm and that a non-cubic phase BN, 10-15 nm was initially grown.</abstract><pub>대한금속재료학회</pub><tpages>5</tpages></addata></record>
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subjects cBN
cubic boron nitride
hardness
ME-ARE
transmission electron microscopy
title Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T22%3A55%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kiss&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20and%20Characterization%20of%20Cubic%20Boron%20Nitride%20Thin%20Films%20Using%20the%20ME%20-%20ARE%20Method&rft.jtitle=Metals%20and%20materials%20international&rft.au=Eung%20Sun%20Byon&rft.date=2000-10-01&rft.volume=6&rft.issue=5&rft.spage=467&rft.pages=467-&rft.issn=1598-9623&rft_id=info:doi/&rft_dat=%3Ckiss%3E1681961%3C/kiss%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_kiss_id=1681961&rfr_iscdi=true