Synthesis and Characterization of Cubic Boron Nitride Thin Films Using the ME - ARE Method

Cubic boron nitride (cBN) films were deposited by a magnetically enhanced activated reactive evaporation (ME-ARE) technique. Pulsed DC instead of r.f. power was used to bias the substrate. The effect of deposition parameters such as substrate bias voltage, plasma discharge current and gas flow ratio on the formation of cBN was investigated. BN mms were characterized by FTIR and TEM. CBN films with a high content of cubic phase were successfully synthesized. It was found that formation of cBN film requires the bombardment of ions with both high flux and high energy. TEM observation showed that the cBN film had grain sizes of 15-50 nm and that a non-cubic phase BN, 10-15 nm was initially grown.