Impurity concentration study on ferromagnetism in Cu-doped $\chem{TiO_2}$ thin films

We report here the observation of significant room-temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, Cu-doped rutile ${\rm TiO}_{2}$ thin films grown by reactive magnetron sputtering. Films annealed in air were nonmagnetic while those annealed in vacuum were ferromagne...

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Veröffentlicht in:Europhysics letters 2007-06, Vol.78 (6)
Hauptverfasser: Hou, Deng Lu, Meng, Hai Juan, Jia, Li Yun, Ye, Xiao Juan, Zhou, Hong Juan, Li, Xiu Ling
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Sprache:eng
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Zusammenfassung:We report here the observation of significant room-temperature ferromagnetism in a semiconductor doped with nonmagnetic impurities, Cu-doped rutile ${\rm TiO}_{2}$ thin films grown by reactive magnetron sputtering. Films annealed in air were nonmagnetic while those annealed in vacuum were ferromagnetic with a Curie temperature about 350 K. The magnetic moment per copper atom decreased as the copper concentration increased. These results show that both the oxygen vacancies and the distance between nearest-neighbor copper atoms play a crucial role for the appearance of magnetism.
ISSN:0295-5075
1286-4854
DOI:10.1209/0295-5075/78/67001