Characteristics of passive Taresistive planes embedded in Alsheet PCB compatible for integrated MCMsubstrates or packaging carriers
Recent progress in the investigation of the material parameters of AlAl2O3systems leads to an increase in the possibilities for using embedded TaOXN1X layers. The use of Alsheets as mechanical strength carriers in combination with vacuumdeposited Allayers and electrochemically anodized Al2O3 structu...
Gespeichert in:
Veröffentlicht in: | Microelectronics international 1999-04, Vol.16 (1), p.18-20 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Recent progress in the investigation of the material parameters of AlAl2O3systems leads to an increase in the possibilities for using embedded TaOXN1X layers. The use of Alsheets as mechanical strength carriers in combination with vacuumdeposited Allayers and electrochemically anodized Al2O3 structure requires study. This was found to create a periodic multilayer AlAl2O3 structure. The material qualities of this system allow optimization in order to achieve high speed data processing and signal propagation. The existing studies using Al and Ta combination as well as the high resistance qualities of the modified TaOXN1X layers have shown satisfactory results. It can be concluded that the development of this new layer combination is possible in the multilayer carrier structures. Some preliminary research studies show a proper adhesion and satisfactory characteristics of the two integrated resistive planes in the multilayer combination AlAl2O3TaOXN1XTa2O5Al. |
---|---|
ISSN: | 1356-5362 |
DOI: | 10.1108/13565369910250041 |