Effect of the Active Layer Thickness and Temperature on the Switching Kinetics of GeS2-Based Conductive Bridge Memories

In this paper, the effect of the active layer thickness and temperature on the switching kinetics of GeS 2 -based conductive bridge memories is addressed through electrical characterization. Results are explained in terms of a thermally and field driven ion hopping model for reversible resistance switching. The combined analysis reveals that at high temperature the set voltage and the set resistance decrease. Furthermore, the study suggests that applying the same reset condition, for GeS 2 thicknesses lower than 50 nm, the conductive filament is almost dissolved, while for thicker layers a portion of the filament still remains.