Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors
Atomic layer deposition (ALD) of SiO 2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the...
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| Veröffentlicht in: | Jpn J Appl Phys 2013-11, Vol.52 (11), p.116503-116503-4 |
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| container_issue | 11 |
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| container_title | Jpn J Appl Phys |
| container_volume | 52 |
| creator | Endo, Kazuhiko Ishikawa, Yuki Matsukawa, Takashi Liu, Yongxun O'uchi, Shin-ichi Sakamoto, Kunihiro Tsukada, Junichi Yamauchi, Hiromi Masahara, Meishoku |
| description | Atomic layer deposition (ALD) of SiO 2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO 2 sidewall spacer have been successfully fabricated. The performance of the FinFET has been successfully improved by reduction of the parasitic resistance. |
| doi_str_mv | 10.7567/JJAP.52.116503 |
| format | Article |
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The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO 2 sidewall spacer have been successfully fabricated. 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The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO 2 sidewall spacer have been successfully fabricated. The performance of the FinFET has been successfully improved by reduction of the parasitic resistance.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.52.116503</doi></addata></record> |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| title | Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors |
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