Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors

Atomic layer deposition (ALD) of SiO 2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the...

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Veröffentlicht in:Jpn J Appl Phys 2013-11, Vol.52 (11), p.116503-116503-4
Hauptverfasser: Endo, Kazuhiko, Ishikawa, Yuki, Matsukawa, Takashi, Liu, Yongxun, O'uchi, Shin-ichi, Sakamoto, Kunihiro, Tsukada, Junichi, Yamauchi, Hiromi, Masahara, Meishoku
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Sprache:eng
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Zusammenfassung:Atomic layer deposition (ALD) of SiO 2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO 2 sidewall spacer have been successfully fabricated. The performance of the FinFET has been successfully improved by reduction of the parasitic resistance.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.116503