Atomic Layer Deposition of SiO2 for the Performance Enhancement of Fin Field Effect Transistors
Atomic layer deposition (ALD) of SiO 2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the...
Gespeichert in:
Veröffentlicht in: | Jpn J Appl Phys 2013-11, Vol.52 (11), p.116503-116503-4 |
---|---|
Hauptverfasser: | , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Atomic layer deposition (ALD) of SiO 2 by using a tetraethoxysilane (TEOS) or a bis(ethylmethylamino)silane (BEMAS) have been studied for the side-wall spacer formation of the fin field effect transistor (FinFET). The ALD-SiO 2 can be deposited conformally at 50 °C for the TEOS and at 250 °C for the BEMAS precursor. As a result, FinFETs with a 25-nm-long extension of the source/drain using the ALD grown SiO 2 sidewall spacer have been successfully fabricated. The performance of the FinFET has been successfully improved by reduction of the parasitic resistance. |
---|---|
ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/JJAP.52.116503 |