Improved Performance of ($11\bar{2}2$) Semipolar InGaN/GaN Light-Emitting Diodes Grown Using a Hemispherically Patterned SiO2 Mask

In this paper, we report on the improved performance of ($11\bar{2}2$) semipolar InGaN/GaN light-emitting diodes (LEDs) grown using a hemispherically patterned SiO 2 mask on an $m$-plane sapphire substrate (HP-SiO 2 ), in comparison with a planar $m$-plane sapphire substrate and a hemispherically pa...

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Veröffentlicht in:Jpn J Appl Phys 2013-10, Vol.52 (10), p.10MA03-10MA03-4
Hauptverfasser: Min, Daehong, Yoo, Geunho, Ryu, Yongwoo, Moon, Seunghwan, Nam, Kibum, Lim, Hongchul, Nam, Okhyun
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Sprache:eng ; jpn
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Zusammenfassung:In this paper, we report on the improved performance of ($11\bar{2}2$) semipolar InGaN/GaN light-emitting diodes (LEDs) grown using a hemispherically patterned SiO 2 mask on an $m$-plane sapphire substrate (HP-SiO 2 ), in comparison with a planar $m$-plane sapphire substrate and a hemispherically patterned $m$-plane sapphire substrate (HPSS), by metalorganic chemical vapor deposition. The full widths at half maximum of X-ray rocking curves for the on- and off-axes planes of the GaN layers on HP-SiO 2 were the narrowest of the three samples. Cross-sectional transmission electron microscopy images showed larger low defect areas of GaN layers on HP-SiO 2 than on HPSS. The electroluminescence results showed that the optical powers of LEDs on HPSS and HP-SiO 2 increased by approximately 2.7 and 6 times, respectively, over that of $m$-planar sapphire at 100 mA. Our results suggest that the introduction of HP-SiO 2 is very effective to improve the crystal quality as well as the light extraction efficiency of semipolar InGaN LEDs.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.52.10MA03