Fabrication of Multilayer Pb(Zr0.53Ti0.47)O3 Film Crystallized by Laser Annealing

Crystallization of Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) films derived from sol--gel precursor solutions using a continuous-wave (CW) 980 nm semiconductor laser is discussed in this paper. By using a 0.3 M precursor solution and repeating 4 times a sequence of drying, pyrolysis, and laser annealing (LA) processes, 150-nm-thick PZT films with (111)-preferred texture are obtained. By adjusting the laser power according to the variation in film thickness, PZT crystallization is induced throughout the film, which is confirmed by electron diffraction patterns. The dielectric constant and loss tangent measured with an oscillation voltage of 0.8 V at 10 kHz are 1200 and 0.078, respectively. The remanent polarization and coercive field of the LA-PZT film are 30 μC/cm 2 and 104 kV/cm, respectively. The field-induced strain property calculated from the voltage-displacement curve obtained by an atomic force microscopy measurement is comparable to that of the PZT film fabricated by rapid thermal annealing.