Electrical Characteristics of Ge25Se75 Thin Films by Ag Ion Doping Methods for Resistance Random Access Memory Applications

Chalcogenide thin films have characteristics of both electric switching and individual optical reactivity. The resistance random access memory (ReRAM) using amorphous chalcogenide materials is based on the electrochemical control of photodiffused metal ions in chalcogenide thin films. In this study we focus on the formation of a straight filament pattern in Ge 25 Se 75 thin films by changing the doping method for Ag ions. Ag photodissolution was performed by the general method (UV exposure) and a holographic lithography method [using He--Ne laser (632.8 nm)]. We measured the electrical characteristics of each device. Improved results were obtained with the induced straight filament pattern device. In the device patterned straightly, operation voltage and reliability were improved.