Electrical Conductive Corundum-Structured $\alpha$-Ga2O3 Thin Films on Sapphire with Tin-Doping Grown by Spray-Assisted Mist Chemical Vapor Deposition

We report the fabrication of electrical conductive tin-doped $\alpha$-Ga 2 O 3 thin films on $c$-plane sapphire substrates. The mist chemical vapor deposition method brought tin-doped $\alpha$-Ga 2 O 3 thin films with high crystallinity without noticeable other phases, as highlighted by the full-width of X-ray diffraction $\omega$-scan rocking curves as small as 40 arcsec, for the tin atomic density in the film upto ${\sim}10^{20}$ cm -3 . The resistivity decreased by more doping of tin, and the $\alpha$-Ga 2 O 3 thin film with minimum resistivity exhibited n-type conductivity with the Hall mobility of 2.8 cm 2 V -1 s -1 and the carrier density of $2.7 \times 10^{19}$ cm -3 .