Low-Voltage Organic Field-Effect Transistors Fabricated on Self-Assembled-Monolayer-Free SrTiO3 Insulator

Strontium titanate (SrTiO 3 ) thin film with a dielectric constant of $\varepsilon_{\text{r}} = 12.1$ prepared on a heavily doped n-type silicon wafer by sputtering. Both pentacene and C 60 field-effect transistors fabricated using the self-assembled monolayer (SAM)-free SrTiO 3 as an insulator showed well-saturated output characteristics at a driving voltage as low as $-3$ or 3 V. Hole mobility of the pentacene-FET was 0.28 cm 2 V -1 s -1 , while electron mobility of the C 60 -FET was 0.09 cm 2 V -1 s -1 .