Impact of Thin Island-Like BaSi2 Template on the Formation of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy

We have grown n + -BaSi 2 /p + -Si tunnel junctions with different BaSi 2 template layer thicknesses by molecular beam epitaxy. Even when the template layer was 1 nm in thickness, which was not actually a continuous film but small islands, they act as seed crystals for the initiation of overlayer gr...

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Veröffentlicht in:Jpn J Appl Phys 2010-06, Vol.49 (6), p.068001-068001-2
Hauptverfasser: Saito, Takanobu, Matsumoto, Yuta, Sasaki, Ryo, Takeishi, Michitoshi, Suemasu, Takashi
Format: Artikel
Sprache:eng ; jpn
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Zusammenfassung:We have grown n + -BaSi 2 /p + -Si tunnel junctions with different BaSi 2 template layer thicknesses by molecular beam epitaxy. Even when the template layer was 1 nm in thickness, which was not actually a continuous film but small islands, they act as seed crystals for the initiation of overlayer growth. The electrical resistance of the junctions increased with template thickness. Both epitaxial growth and low resistance were achieved for thin island-like BaSi 2 templates.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.49.068001