Temperature Dependence of Cu2ZnSnS4 Photovoltaic Cell Properties
We studied the temperature dependence of current--voltage characteristics of Cu 2 ZnSnS 4 (CZTS) photovoltaic cells to determine their fundamental properties. The open circuit voltage ($V_{\text{oc}}$) in CZTS cells increased from 0.61 to 0.85 V and showed a linear relationship with decreasing tempe...
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Veröffentlicht in: | Applied physics express 2012-08, Vol.5 (8), p.082302-082302-3 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | We studied the temperature dependence of current--voltage characteristics of Cu 2 ZnSnS 4 (CZTS) photovoltaic cells to determine their fundamental properties. The open circuit voltage ($V_{\text{oc}}$) in CZTS cells increased from 0.61 to 0.85 V and showed a linear relationship with decreasing temperature in the range from 150 to 350 K. The $V_{\text{oc}}$ at 0 K was extrapolated to about 1.2 V, which is lower than the bandgap energy of CZTS. These results suggest that the reason for the lower $V_{\text{oc}}$ in CZTS cells is recombination at the interface between the CZTS and buffer layers. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.1143/APEX.5.082302 |