Temperature Dependence of Cu2ZnSnS4 Photovoltaic Cell Properties

We studied the temperature dependence of current--voltage characteristics of Cu 2 ZnSnS 4 (CZTS) photovoltaic cells to determine their fundamental properties. The open circuit voltage ($V_{\text{oc}}$) in CZTS cells increased from 0.61 to 0.85 V and showed a linear relationship with decreasing tempe...

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Veröffentlicht in:Applied physics express 2012-08, Vol.5 (8), p.082302-082302-3
Hauptverfasser: Tajima, Shin, Katagiri, Hironori, Jimbo, Kazuo, Sugimoto, Noriaki, Fukano, Tatsuo
Format: Artikel
Sprache:eng
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Zusammenfassung:We studied the temperature dependence of current--voltage characteristics of Cu 2 ZnSnS 4 (CZTS) photovoltaic cells to determine their fundamental properties. The open circuit voltage ($V_{\text{oc}}$) in CZTS cells increased from 0.61 to 0.85 V and showed a linear relationship with decreasing temperature in the range from 150 to 350 K. The $V_{\text{oc}}$ at 0 K was extrapolated to about 1.2 V, which is lower than the bandgap energy of CZTS. These results suggest that the reason for the lower $V_{\text{oc}}$ in CZTS cells is recombination at the interface between the CZTS and buffer layers.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.5.082302