All-electronic coherent population trapping in quantum dots

We present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The trapped state is a coherent superposition of the ele...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Europhysics letters 2006-03, Vol.73 (5), p.677-683
Hauptverfasser: Michaelis, B, Emary, C, Beenakker, C. W. J
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The trapped state is a coherent superposition of the electronic charge in two of these quantum dots, so it is destabilized as a result of decoherence by coupling to external charges. The resulting current I through the device depends on the ratio of the decoherence rate $\Gamma_{\phi}$ and the tunneling rates. For $\Gamma_{\phi}\rightarrow 0$ one has simply $I=e\Gamma_{\phi}$. With increasing $\Gamma_{\phi}$ the current peaks at the inverse trapping time. The direct relation between I and $\Gamma_{\phi}$ can serve as a means of measuring the coherence time of a charge qubit in a transport experiment.
ISSN:0295-5075
1286-4854
DOI:10.1209/epl/i2005-10458-6