All-electronic coherent population trapping in quantum dots
We present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The trapped state is a coherent superposition of the ele...
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Veröffentlicht in: | Europhysics letters 2006-03, Vol.73 (5), p.677-683 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We present a fully electronic analogue of coherent population trapping in quantum optics, based on destructive interference of single-electron tunneling between three quantum dots. A large bias voltage plays the role of the laser illumination. The trapped state is a coherent superposition of the electronic charge in two of these quantum dots, so it is destabilized as a result of decoherence by coupling to external charges. The resulting current I through the device depends on the ratio of the decoherence rate $\Gamma_{\phi}$ and the tunneling rates. For $\Gamma_{\phi}\rightarrow 0$ one has simply $I=e\Gamma_{\phi}$. With increasing $\Gamma_{\phi}$ the current peaks at the inverse trapping time. The direct relation between I and $\Gamma_{\phi}$ can serve as a means of measuring the coherence time of a charge qubit in a transport experiment. |
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ISSN: | 0295-5075 1286-4854 |
DOI: | 10.1209/epl/i2005-10458-6 |