Excitation density distribution in electron-beam-pumped ZnSe semiconductor lasers

The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power thr...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Quantum electronics (Woodbury, N.Y.) N.Y.), 2008-12, Vol.38 (12), p.1097-1100
Hauptverfasser:	Donskoi, E N, Zhdanova, E V, Zalyalov, A N, Zverev, M M, Ivanov, S V, Peregudov, D V, Petrushin, O N, Savel'ev, Yu A, Sedova, I V, Sorokin, S V, Tarasov, M D, Shigaev, Yu S
Format:	Artikel
Sprache:	eng
Schlagworte:	ANALYTIC FUNCTIONS APPROXIMATIONS BEAMS CALCULATION METHODS CHALCOGENIDES CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS DENSITY DISTRIBUTION ELECTRICAL PUMPING ELECTRON BEAM PUMPING ELECTRON BEAMS ELECTRONS ELEMENTARY PARTICLES ENERGY RANGE ENERGY-LEVEL TRANSITIONS EXCITATION FERMIONS FUNCTIONS KEV RANGE LASERS LEPTON BEAMS LEPTONS MEV RANGE MONTE CARLO METHOD NANOSTRUCTURES PARTICLE BEAMS PHYSICAL PROPERTIES PUMPING QUANTUM WELLS SELENIDES SELENIUM COMPOUNDS SEMICONDUCTOR DEVICES SEMICONDUCTOR LASERS SOLID STATE LASERS SPATIAL DISTRIBUTION ZINC COMPOUNDS ZINC SELENIDES
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The spatial density distribution of the absorbed energy in ZnSe semiconductor lasers excited by electrons with energies from 2 keV to 1 MeV is calculated by the Monte-Carlo method. Approximate analytic expressions determining the absorbed energy of electrons in ZnSe are presented. The pump power threshold in a semiconductor quantum-well ZnSe structure is experimentally determined. The lasing threshold in such structures is estimated as a function of the electron energy. (active media)
ISSN:	1063-7818 1468-4799
DOI:	10.1070/QE2008v038n12ABEH013848