Interferometric study of electronic changes in the refractive index of a Nd:YAG laser crystal caused by intense pumping

Changes in the refractive index of a Nd:YAG laser crystal caused by intense pumping are measured using a polarisation interferometer. A significant electronic component in the refractive-index changes associated with the excitation of the {sup 4}F{sub 3/2} electronic level of Nd{sup 3+} ions is reve...

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Veröffentlicht in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2003-10, Vol.33 (10), p.861-868, Article 861
Hauptverfasser: Antipov, Oleg L, Eremeikin, O N, Savikin, A P
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Sprache:eng
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Zusammenfassung:Changes in the refractive index of a Nd:YAG laser crystal caused by intense pumping are measured using a polarisation interferometer. A significant electronic component in the refractive-index changes associated with the excitation of the {sup 4}F{sub 3/2} electronic level of Nd{sup 3+} ions is revealed in the crystal pumped by 808-nm radiation of a pulsed diode array. An appreciable increase in the electronic component of the refractive index, which is caused by the population of the {sup 2}F(2){sub 5/2} high-energy level, is observed in a Nd:YAG crystal additionally pumped by a 266-nm laser beam. Analytic calculations show that the short-wavelength 4f-5d transitions provide a predominant contribution to the polarisability of excited Nd{sup 3+} ions at the 1064.2-nm lasing transition. (active media)
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2003v033n10ABEH002515